Presentation Information
[Tu-3B-04]Demonstration of Higher-Current 500 °C Durable 4H-SiC JFET Chips
*Philip Neudeck1, David Spry1, Robert Macdonald2, Robert Gossman2, Christopher Collazo-Davila2, Stacey Kennerly2, Liangyu Chen3, Carl Chang4, Mohamed Lababidi4, Sean McDarby5 (1. NASA Glenn Research Center (USA), 2. GE Aerospace (USA), 3. Ohio Aerospace Institute (USA), 4. HX5 LLC (USA), 5. E Street Technologies (USA))