Presentation Information
[Tu-P-02]Enhanced Doping Uniformity and Morphological Stability in 8-inch 4H-SiC Single Crystal Growth via Hot-Zone Structural Modification
*SUHO KIM1, Jung Gyu Kim1, Myung Ok Kyun1, Yeon Suk Jang1, Kap Ryeol Ku1, Jung Gon Kim2, Mi Seon Park2, Won Jae Lee2 (1. EINCRYSTAL Co.,Ltd. (Korea), 2. Univ. of Dong-Eui (Korea))