Session Details
[Tu-P]Poster Session
Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Poster-A (1st Floor)
[Tu-IP]Thermal response of threading dislocations in SiC substrates using UV-excited lock-in thermography
*JUHYEONG Sun1, Ryohei Fujita1, Michio Kawase2, Hosei Nagano1, Masachi Kato3, Kenta Murayama4, Kentaro Kutsukake1,2, Toru Ujihara1,2, Shunta Harada1,2 (1. Nagoya university (Japan), 2. Inst. of Materials and Systems for Sustainability (IMaSS) (Japan), 3. Nagoya Institute of Technology (Japan), 4. Mipox Corporation (Japan))
[Tu-P-01]Growth and Characterization of Heavily Nitrogen-Doped 150 mm 4H-SiC Wafers with Resistivity Near 0.01 Ω·cm
*Xueping Xu1, Ever Velasco1, Rajan Rengarajan1 (1. Coherent Corp. (USA))
[Tu-P-02]Enhanced Doping Uniformity and Morphological Stability in 8-inch 4H-SiC Single Crystal Growth via Hot-Zone Structural Modification
*SUHO KIM1, Jung Gyu Kim1, Myung Ok Kyun1, Yeon Suk Jang1, Kap Ryeol Ku1, Jung Gon Kim2, Mi Seon Park2, Won Jae Lee2 (1. EINCRYSTAL Co.,Ltd. (Korea), 2. Univ. of Dong-Eui (Korea))
[Tu-P-03]Growth of thick Al-doped 4H-SiC layers using Close Space Physical Vapor Transport Growth
Ole Schneider1, Cristina Grazzi1, Lucrezia Tana1, Mikael Syväjärvi2, *Peter J Wellmann1 (1. Universität Erlangen-Nürnberg (FAU) (Germany), 2. ALMINICA AB, ICM Research Institute (Sweden))
[Tu-P-04]Evaluation of Defect Generation in P-type 4H-SiC PVT Growth under Al–N Co-Doping Conditions
*Kazuma Eto1, Shigeyuki Kuboya1, Takeshi Mitani1, Tomohisa Kato1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
[Tu-P-05]Growth of High-quality P-type Substrates by TSSG Method
*Yu Guo1, Chunjun Liu1, Yuxin Li1, Xu Sui1, Yue Shi1, Yuhui liu1, Tonghua Peng1, Jian Yang1 (1. TanKeBlue Semiconductor Co., Ltd (China))
[Tu-P-06]Cross-Sectional Analysis of Macrostep Evolution Leading to Solvent Inclusion Formation in Al-Doped Solution-Grown 4H-SiC
Takahiro Ito1, Kentaro Kutsukake1, Shunta Harada1, *TORU UJIHARA1 (1. Nagoya Univ. (Japan))
[Tu-P-07]Optimization of temperature distribution for suppressing SiC inclusions during SiC solution growth
*Kazuki Shibayama1, Takeshi Mitani2, Tsukasa Washio1, Daisuke Tahara1, Shigeyuki Kuboya2, Kazuma Eto2, Tomohisa Kato2 (1. Sumitomo Metal Mining Co., Ltd. (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))
[Tu-P-08]Thermodynamic Evaluation of the Al-C-Cr-Si System for SiC Solution Growth
*Kazuhisa Kurashige1, Yoshihisa Abe1, Akihisa Kawabe1, Junya Osada1, Hideo Nakanishi1, Hiroyuki Ishibashi1, Toru Ujihara2 (1. OXIDE Power Crystal Corporation (Japan), 2. Nagoya University (Japan))
[Tu-P-09]Carbon/Graphite: The Hot Zone Hero
*Joe Abrahamson Abrahamson1, Fernando Vallejos-Burgos1, Ievgen Izvarin1, Patrick Rondomanski1, Linsea Foster1, Mathias Yost1,2, Thomas Connolly1, Anirban Phukan2, Randy Vander Wal2, Dave Fecko2, Adri van Duin2, Josh Robinson2 (1. Morgan Advanced Materials (USA), 2. Penn State University (USA))
[Tu-P-10]High Temperature Emissivity Measurement Of Metal Carbide Coating
*Bowen Dong1, Creighton Tomek1, Jeffrey Lennartz1, Wei Fan1, Jon Leist1 (1. Momentive Technologies (USA))
[Tu-P-11]Refurbishment of TaC-Coated Wafer Carriers by Parasitic Deposit Removal and Restorative Recoating
*Jeff Lennartz1, Wei Fan1, Yani Sun1, Jon Leist1, Bowen Dong1 (1. Momentive Technologies (USA))
[Tu-P-12]TEM Analysis of Process-Induced Subsurface Damage in β-Ga2O3 (001) Substrates for Kerf-Loss Reduction
*Taekyung Lee1, Hanchul Cho1 (1. Korea Institute of Industrial Technology (Korea))
[Tu-P-13]Characterization of High Quality Thick Epitaxial SiC Wafers for High kV Applications
*Dong Seung Lee1, Tawhid Rana1, Kirby Schmidt1, Srujana Prayakarao1, Shanthi Subramanian1 (1. Coherent Corp. (USA))
[Tu-P-14]Kinetic Modeling and Simulation of 4H-SiC Trench Growth
*Angela Garofalo1,2, Kelly Turner3, Gerard Colston3, Vishal Shah3, Roberto Bergamaschini1, Stefano Sanguinetti1 (1. Univ. of Milano-Bicocca (Italy), 2. Indus. Vishay Semiconductors Italiana (Italy), 3. Univ. of Warwick (UK))
[Tu-P-15]n-p and p-n Junctions Grown in a Single Epitaxy Process
*Philip Hens1, Michael Pfeffer1, Johannes Koehler1, Felix Beier2, Birgit Kallinger2, Jürgen Erlekampf1 (1. AIXTRON SE (Germany), 2. Fraunhofer IISB (Germany))
[Tu-P-16]Influence of Technological Surface Structures for Super Junction Devices on 4H SiC Epitaxial Overgrowth
*Nikolas Schabert1, Janina Engelhardt1, Rupert Ullmann2, Philip Hens2, Birgit Kallinger1, Oleg Rusch1 (1. Inst. Fraunhofer IISB (Germany), 2. Indus. AIXTRON SE (Germany))
[Tu-P-17]Influence of Ion Implantation and Epitaxial Overgrowth on the Charge Carrier Lifetime in 4H-SiC Epilayer Stacks
*Christian Wißgott1, Birgit Kallinger1, Mauro Emilio Keck1, Norman Böttcher1 (1. Fraunhofer IISB (Germany))
[Tu-P-18]Unlocking the Polycrystalline to Monocrystalline Phase Transition in Heteroepitaxial Cubic Silicon Carbide Compound Semiconductor
*Behzad Jazizadeh1, Maksym Myronov1 (1. University of Warwick (UK))
[Tu-P-19]3C-SiC formation by solid state reaction of Si and C multilayers deposited on silicon substrates
Dwarakesh Sudhahar1,2, Joachim Döll3, Marc Pezoldt4, Deepshikha Shekhawat1, *Joerg Pezoldt1 (1. TU Ilmenau (Germany), 2. Ruhr-Universität Bochum (Germany), 3. Zentrum für Mikro- und Nanotechnologien (Germany), 4. KI Keramik-Institut GmbH (Germany))
[Tu-P-20]In-situ surface preparation of various alpha-SiC surfaces for 3C-SiC growth
*Gabriel Ferro1, Ahmed Jabbouja1, François Cauwet1 (1. CNRS - Lyon 1 Unversity (France))
[Tu-P-21]Multiphoton-excited photoluminescence analysis of micropipes and related defect structures in 4H-SiC substrates
*Hirofumi Hoshida1, Shota Fujiki1, Mari Yamamoto1, Takeshi Mitani2, Junji Senzaki2 (1. Lasertec Corp. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))
[Tu-P-22]Physical Revelation and Analysis of Dislocation Densities in Sub-Micron SmartSiC™ Substrates and Direct Correlation with Donor Bulk Crystals
*Alexis DROUIN1, Vanessa OROZCO1, Walter Schwarzenbach1 (1. SOITEC S.A. (France))
[Tu-P-23]Impact of Buffer Thickness on Bipolar Degradation in SiC Power MOSFETs and Diodes under Transient Surge Current Pulses
*Alexander Brunko1, Tobias Erlbacher1, Firas Faisal1 (1. Nexperia Germany (Germany))
[Tu-P-24]Photoluminescence characterization of Shockley Stacking Faults triggered in high power 4H-SiC devices
*Nicolo Piluso1, Cristiano Calabretta1, Fabiana Vento1, Salvatore Adamo1, Ketty Bottari1, Beatrice Carbone1, Giovanni Maira1, Enzo Fontana1, Angela TERRACINA1, Laura ANOLDO1, Giuseppe TOSTO1, Santina BEVILACQUA1, Marco IACOBUCCI1, Santi ALESSANDRINO1, Giuseppe Arena1, Andrea Severino1 (1. Indus. - STmicroelectronics (Italy))
[Tu-P-25]Conversion of Substrate Dislocations to Stacking Faults
and Influence of Aluminum Implantation on Stacking Faults
*Nadja Kölbel1, Birgit Kallinger2, Christian Kallinger Kranert2, Tobias Erlbacher3, Firas Faisal3, Jörg Schulze1,2 (1. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Fraunhofer IISB (Germany), 3. Nexperia (Germany))
[Tu-P-26]Influence of annealing temperature and orientation of basal plane dislocations on their conversion to threading edge dislocations in a 4H-SiC substrate
*Aoi Okada1, Chiharu Ota1, Ryoichi Ohara2 (1. Toshiba Corp. (Japan), 2. Toshiba Electronic Devices & Storage Corp. (Japan))
[Tu-P-27]Carrier-induced reduction in basal-plane slip barriers in 4H-SiC
*Hiroki Sakakima1, Satoshi Izumi1 (1. Univ. of Tokyo (Japan))
[Tu-P-28]Differences in the Distribution of Nonradiative Recombination in PVT- and Solution-Grown SiC Wafers by Laser Heterodyne Photothermal Displacement Method
*Kouyou Harada1, Masashi Kato2, Atsuhiko Fukuyama1 (1. Univ. of Miyazaki (Japan), 2. Nagoya Inst. of Tech (Japan))
[Tu-P-29]Improving of Lithium-Ion Battery Capacity with Heteroepitaxial 3C-SiC
*Jade Croft1, Gerard Colston1, Nicholas Grant1, Claire Hurley1, Luke Wilkins1, Vishal Shah1 (1. The University of Warwick (UK))
[Tu-P-30]Quantitative Photoelastic Imaging of Residual Strains in Commercial Off-Axis SiC Wafers
*Naoto Tsuji1, Ryoya Watanabe1, Masayuki Fukuzawa1 (1. Kyoto Institute of Technology (Japan))
[Tu-P-31]Evaluation of Thermal Conductivity in Single-Crystal Silicon Carbide
*Abdullah Khan1, Xueping Xu1, Rajan Rengarajan1, Ilya Zwieback1, Elijah Allridge1 (1. Coherent Corp. (USA))
[Tu-P-32]Enhanced Emission of Silicon Vacancy in SiC Thin Film by Al2O3 Passivation
*Yurong Ren1, Shuangyou Zhang1, Mingjun Chi1, Karsten Rottwitt1, Haiyan Ou1 (1. Technical University of Denmark (Denmark))
[Tu-P-33]Carrier Lifetime Observation in 4H-SiC PiN Diodes Evaluated by Time-Resolved Electroluminescence
*Tong Li1, Yoshiyuki Yonezawa2, Masashi Kato1 (1. Nagoya Inst. of Tech. (Japan), 2. AIST (Japan))
[Tu-P-34]Detailed μ-PCD Decay Curve Characterization for Defect-Related Recombination in 4H-SiC Epitaxial Layers
*Takumi Wakabayashi1, Kazushi Hayashi2, Hideo Fujii2, Yoshihiro Yokota1, Naoki Okano1, Junji Senzaki3 (1. Kobelco Research Institute, Inc. (Japan), 2. Kobe Steel, Ltd. (Japan), 3. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
[Tu-P-35]Enhanced methodology for minority charge carrier lifetime
measurements using EBID and frequency-dependent EBIC
*Christian Stefan Gruber1,2, Gregor Pobegen2, Jürgen Smoliner1 (1. TU Wien (Austria), 2. KAI GmbH (Austria))