Presentation Information
[Tu-P-03]Growth of thick Al-doped 4H-SiC layers using Close Space Physical Vapor Transport Growth
Ole Schneider1, Cristina Grazzi1, Lucrezia Tana1, Mikael Syväjärvi2, *Peter J Wellmann1 (1. Universität Erlangen-Nürnberg (FAU) (Germany), 2. ALMINICA AB, ICM Research Institute (Sweden))