Presentation Information
[Tu-P-14]Kinetic Modeling and Simulation of 4H-SiC Trench Growth
*Angela Garofalo1,2, Kelly Turner3, Gerard Colston3, Vishal Shah3, Roberto Bergamaschini1, Stefano Sanguinetti1 (1. Univ. of Milano-Bicocca (Italy), 2. Indus. Vishay Semiconductors Italiana (Italy), 3. Univ. of Warwick (UK))