Presentation Information
[Tu-P-26]Influence of annealing temperature and orientation of basal plane dislocations on their conversion to threading edge dislocations in a 4H-SiC substrate
*Aoi Okada1, Chiharu Ota1, Ryoichi Ohara2 (1. Toshiba Corp. (Japan), 2. Toshiba Electronic Devices & Storage Corp. (Japan))