Presentation Information

[Tu-P-38]Damage Accumulation During High-energy Channeling Implantation of Phosphorus into 4H-SiC

*Manuel Belanche Guadas1, Helton Goncalves de Medeiros1, René Heller2, Hitesh Jayaprakash3, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland), 2. Helmholtz-Zentrum Dresden-Rossendorf (Germany), 3. mi2-factory GmbH (Germany))