ICSCRM2026
Advanced Search

Session Details

Poster SessionTrack 06 Implantation, Contacts, Etching, and Other Processes

[Tu-P]Implantation, Contacts, Etching, and Other Processes

Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Poster-B(4th Floor, G401+G402)

[Tu-P-37]Predicting Electronic Stopping Powers along 4H-SiC <11-23> Direction

*Kazuhiro Mochizuki1, Tomoaki Nishimura1, Tomoyoshi Mishima1, Fumimasa Horikiri1, Hiroshi Ohta1,2 (1. Hosei Univ. (Japan), 2. Devise Tech Inc. (Japan))

[Tu-P-38]Damage Accumulation During High-energy Channeling Implantation of Phosphorus into 4H-SiC

*Manuel Belanche Guadas1, Helton Goncalves de Medeiros1, René Heller2, Hitesh Jayaprakash3, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland), 2. Helmholtz-Zentrum Dresden-Rossendorf (Germany), 3. mi2-factory GmbH (Germany))

[Tu-P-39]Process Simulations of Channeling Implantation for Silicon Carbide Superjunction Power Devices

*Enrico Sangregorio1, Francesco La Via1 (1. National Research Council of Italy - Institute for Microelectronics and Microsystems (Italy))

[Tu-P-40]Effect of Intermediate Annealing on Channeling Implantation in 4H-SiC

*Takeyoshi Masuda1,2, Yu Saito1, Heiji Watanabe2 (1. MITSUMI ELECTRIC Corp. (Japan), 2. Osaka Univ. (Japan))

[Tu-P-41]Multilayer Metallization Strategies for Low-Resistivity Ohmic Contacts to n and p-type 4H-SiC

*Alisha Arora1, Adrian Holm Dubré1, Haiyan Ou1 (1. Technical Univ. of Denmark (Denmark))

[Tu-P-42]n-Type 4H-SiC contact engineering by implantation-annealing co-optimization

Pierre-Edouard Raynal1, sami bolat1, Giovanni Alfieri1, Pooria Asadollahi1, *Fulvio Mazzamuto2, Mike Ameen2, Dwight Roh2 (1. Hitachi Energy (Switzerland), 2. Axcelis (USA))

[Tu-P-43]Comparison of Laser-Annealed Ni and Ti Silicide Ohmic Contacts and Device Performance in 4H-SiC SBDs

Gyunseo Kim1,2, Marko Seifert3, Volker Franke3, Sungwook Jang4, Naksun Sung4, Beomsang Kim4, Tae-Yong Park1, Seong-Min Jeong1, Youngjae Park5, Minjae Kang5, Seongjun Kim5, *Yun-Ji Shin1 (1. KICET (Korea), 2. Kumoh National Inst. of Tech. (Korea), 3. Fraunhofer IWS (Germany), 4. AP systems Corp. (Korea), 5. NINT (Korea))

[Tu-P-44]Comparison of Nanosecond and Femtosecond UV Laser Annealing for Ohmic Contact Formation of Ni/4H-SiC

Yi-Chen Hung1, Ping-Yu Lin1, *Chiao-Yang Cheng1, Di-Hua Huang2, Yi-Chi Lee3 (1. Academy of Innovative Semiconductor and Sustainable Manufac., National Cheng Kung Univ., Tainan 701 (Taiwan), 2. JUMBO LASER Co., Ltd., Tainan 744 (Taiwan), 3. Indus. Tech. and Res. Inst., Hsinchu 310 (Taiwan))

[Tu-P-45]High-Stability Low-on-resistance 4H-SiC Power Devices by Warpage Control and Roughness-Engineered Backside Contacts

*Songlin Yang1 (1. Zhuzhou CRRC Times Semiconductor Co Ltd, (China))

[Tu-P-46]Doping- and Annealing-Dependent Evolution of Transport Mechanisms in Ti/n-4H-SiC Contacts from Rectifying to Ohmic Behavior

*NaLing Zhang1, QinZe Cao1, Huan Ge1, Zheyang Li1, Rui Jin1, Tao Zhu1 (1. Beijing Huairou Lab. (China))

[Tu-P-47]High-Temperature Stability of Silicide-Free Mo/SiCA Ohmic Contacts and SBDs on 4H-SiC

*Hiroaki Hanafusa1, Takahito Fukuzawa1, Seiichiro Higashi1 (1. Hiroshima Univ. (Japan))

[Tu-P-48]WN Diffusion Barrier for Low Gate Leakage Current GaN HEMT Device

*Paolo Badalà1, Antonino Parisi1, Santo Reina1, Cristina Tringali1, Anna Bassi1, Brunella Cafra1, Ferdinando Iucolano1 (1. STMicroelectronics (Italy))
Back to Category List