Presentation Information
[Tu-P-42]n-Type 4H-SiC contact engineering by implantation-annealing co-optimization
Pierre-Edouard Raynal1, sami bolat1, Giovanni Alfieri1, Pooria Asadollahi1, *Fulvio Mazzamuto2, Mike Ameen2, Dwight Roh2 (1. Hitachi Energy (Switzerland), 2. Axcelis (USA))