Presentation Information
[Tu-P-43]Comparison of Laser-Annealed Ni and Ti Silicide Ohmic Contacts and Device Performance in 4H-SiC SBDs
Gyunseo Kim1,2, Marko Seifert3, Volker Franke3, Sungwook Jang4, Naksun Sung4, Beomsang Kim4, Tae-Yong Park1, Seong-Min Jeong1, Youngjae Park5, Minjae Kang5, Seongjun Kim5, *Yun-Ji Shin1 (1. KICET (Korea), 2. Kumoh National Inst. of Tech. (Korea), 3. Fraunhofer IWS (Germany), 4. AP systems Corp. (Korea), 5. NINT (Korea))