[Tu-P] Power Devices

[Tu-P-52] Impact of Double-Epitaxial Drift Layer on JFET-Width-Dependent Characteristics in 1.2-kV 4H-SiC MOSFETs

*Junki Jung¹, Sumin Park¹, Seungri Yang¹, Hyun Park², Sangik Cheon², Yehwan Kang², Jaejin Song³, Derek D. Lee³,Ogyun Seok¹ (1. Pusan National University (Korea), 2. SK Powertech (Korea), 3. SK Keyfoundry (Korea))