Presentation Information
[Tu-P-53]Non-Monotonic Reverse Recovery Behavior in 1.2 kV SBD-Embedded SiC MOSFETs with Different SBD-P-well Ratios
*Wonyoung Shin1, Gyuhyeok Kang1, Jeongtae Kim1, Jinwoo Park1, Juhui Kim1, Sihyun Kwon1, Hyojoon Seo2, Soontak Kwon2, Ogyun Seok1 (1. Pusan National University (Korea), 2. TRinno Technology Co., Ltd (Korea))