ICSCRM2026
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[Tu-P-54]
Design optimization for switching performance characteristics in 1.2kV SiC trench MOSFET
*Juyun Ha
1
, Kwangwon Lee
1
, Taeseop Lee
1
, Seunghyun Hong
1
, Bongyong Lee
1
(1. onsemi (Korea))
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