ICSCRM2026
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Mon. Sep 28, 2026
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[Tu-P-56]
Investigation of Drain-Induced Threshold Voltage Shifts in 1200V SiC MOSFETs
*Woongsun Kim
1
, Naeem Islam
1
, Shane Stein
1
, Sei-Hyung Ryu
1
, Adam Barkley
1
, Elif Balkas
1
(1. Wolfspeed Inc. (USA))
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