Presentation Information
[Tu-P-57]Enhanced High-Temperature Body Diode Stability and Low Switching Losses in 1.2 kV 4H-SiC Planar MOSFETs via Optimized Current Spreading Layer (CSL)
*Yeongeun Park1, Sangik Cheon2, Kyungeun Park2, In-Hwan Ji1, Derek D Lee1 (1. SK Keyfoundry (Korea), 2. SK Powetech (Korea))