Presentation Information
[Tu-P-62]Interface Engineered ALD SiO2 / SiC MOS oxide stack using PEALD-enabled controlled nitridation - Part I: MOSCAP analysis
*Andrii Voznyi1, Tatiana Ivanova1, Mikko Söderlund1, Patrick Rabinzohn1, Tamara Fidler2, Patrick Schmid2, Alexander Schmid3, Franziska Beyer3 (1. Beneq Oy (Finland), 2. Centrotherm International AG (Germany), 3. Fraunhofer IISB (Germany))