Presentation Information
[Tu-P-65]Impact of Atomic Layer Etching Surface Pretreatment on ALD
SiO2/4H-SiC MOS Interface and Channel Transport Properties
*Mustafa Akif YILDIRIM1, Vishal Ajit Shah1, Sean Cho2, Katarzyna Stokeley2, Harriet van der Vliet2, Sami Bolat3, Peter M Gammon1, Marina Antoniou1, Arne Benjamin Renz1 (1. Univ. of Warwick (UK), 2. Oxford Instruments Plasma Tech. (UK), 3. Hitachi Energy Semiconductors Switzerland Ltd (Switzerland))