Presentation Information
[Tu-P-66]Impact of nitrogen-based pre-ALD treatments and post-deposition
annealing on SiO2/4H-SiC and Al2O3/4H-SiC MOS capacitors
Emanuela Schilirò1, Raffaella Lo Nigro1, Marco Zignale1, Patrick Fiorenza1, Giuseppe Greco1, Valerio Votadoro1, Salvatore Di Franco1, Filippo Giannazzo1, Arpita Saha2, Yi Shu2, *Fabrizio Roccaforte1 (1. CNR-IMM, Catania (Italy), 2. Oxford Instruments Plasma Technology, Bristol (UK))