Presentation Information
[Tu-P-71]Radiation Hardness of implanted 4H-SiC LGADs after 23 MeV protons
*Francesco Moscatelli1,2, Arianna Morozzi2, Valentina Sola3,8, Daniele Passeri4,2, Peter Svihra5,6, Radek Novotny5, Vojtech Kracmar5, Jiri Kroll6, Alexander Dierlamm7, Brendan Regnery7, Robert White8, Marco Ferrero8, Sebastian Onder9, Thomas Bergauer9 (1. CNR-Inst. Officina dei Materiali (IOM) (Italy), 2. INFN of Perugia (Italy), 3. Department of Physics, Univ. of Torino (Italy), 4. Department of Eng., Univ. of Perugia (Italy), 5. Department of Physics, FNSPE CTU in Prague (Czech Republic), 6. Department of Detector Development and Data Processing, FZU CAS (Czech Republic), 7. Karlsruhe Inst. of Technology (Germany), 8. INFN of Torino (Italy), 9. Marietta Blau Inst. for Particle Physics (Austria))