Session Details
[Tu-P]Poster Session
Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Poster-C (4th Floor, G403+G404)
[Tu-P-70]Device-to-Circuit Stability of SiC CMOS Current Mirrors Under 15 MeV Proton Irradiation and 180 °C Operation
Tae Seong Kwon1,2, Young Jo Kim1, Hyoung Woo Kim1, Young Jun Yoon3, Sung Yun Woo2, *Jae Hwa Seo1 (1. Korea Electrotechnology Res. Inst. (Korea), 2. Kyungpook National Univ. (Korea), 3. Gyeongkuk National Univ. (Korea))
[Tu-P-71]Radiation Hardness of implanted 4H-SiC LGADs after 23 MeV protons
*Francesco Moscatelli1,2, Arianna Morozzi2, Valentina Sola3,8, Daniele Passeri4,2, Peter Svihra5,6, Radek Novotny5, Vojtech Kracmar5, Jiri Kroll6, Alexander Dierlamm7, Brendan Regnery7, Robert White8, Marco Ferrero8, Sebastian Onder9, Thomas Bergauer9 (1. CNR-Inst. Officina dei Materiali (IOM) (Italy), 2. INFN of Perugia (Italy), 3. Department of Physics, Univ. of Torino (Italy), 4. Department of Eng., Univ. of Perugia (Italy), 5. Department of Physics, FNSPE CTU in Prague (Czech Republic), 6. Department of Detector Development and Data Processing, FZU CAS (Czech Republic), 7. Karlsruhe Inst. of Technology (Germany), 8. INFN of Torino (Italy), 9. Marietta Blau Inst. for Particle Physics (Austria))
[Tu-P-72]Design of 650 V Multi-Channel SiC LMOSFET with Enhanced Radiation Hardness
*Subin Choi1, Hyerin Ju1, Sihyun Kwon1, Jeemin Hyun1, Ogyun Seok1 (1. Pusan National Univ. (Korea))
[Tu-P-73]4H-SiC Active Pixel Sensors with a 4-pixel Sharing Circuit Structure
*Sho Suzuki1, Tatsuya Meguro1, Akinori Takeyama2, Takeshi Ohshima2, Kazutoshi Kojima3, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1. RISE, Hiroshima Univ. (Japan), 2. QST (Japan), 3. AIST (Japan))
[Tu-P-74]4H-SiC Neutron Sensors Based on Active Pixel Sensing Structurefor Boron Neutron Capture Therapy
*Vu Thi Ha1, Tatsuya Meguro1, Kazutoshi Kojima2, Hiroki Tanaka3, Shin-Ichiro Kuroki1 (1. RISE, Hiroshima Univ. (Japan), 2. AIST (Japan), 3. KURNS, Kyoto Univ. (Japan))
[Tu-P-75]Wafer-Level Characteristic Variation of 4H-SiC n/p MOSFETs for Mass Production SiC-CMOS Integrated Circuits
*Kota Shimizu1, Kosuke Muraoka1, Tomonori Maeda1,2, Hiroshi Sezaki1,2, Akinori Takeyama3, Takeshi Ohshima3, Kazutoshi Kojima4, Yasunori Tanaka4, Shin-Ichiro Kuroki1 (1. Hiroshima Univ. (Japan), 2. Phenitec Semiconductor Corp. (Japan), 3. QST (Japan), 4. AIST (Japan))
[Tu-P-76]Memory Characteristics of 4H-SiC Floating-Gate MOS Capacitors
*Ryosuke Namba1, Kosuke Muraoka1, Takeyama Akinori2, Takeshi Ohshima3,2, Kazutoshi Kojima3, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1. Hiroshima Univ. (Japan), 2. QST (Japan), 3. AIST (Japan))
[Tu-P-77]Impact of Single-Stage Amplifier Load Resistance on Regenerative Characteristics of Monolithically Integrated SiC JFET NOT Gates
*Haizhao Zhi1, Sirui Feng1, Ling Li1, Rongxin Du1, Xinpeng Lin1, Jinghan Xu1, Xinyue Dai1, Xiaoping Wang1, Yuxi Wan1 (1. Shenzhen Pinghu Laboratory (China))
[Tu-P-78]Distance-Metric-Based Evaluation of Charge-Trap-Induced Degradation in Id–VgsCharacteristics of SiC MOSFETs
*Sanshiro Yoichi1, Koichi Endo2, Hiroki Nagasawa1, Junji Senzaki2, Shinji Yokogawa1 (1. Univ. of Electro-Communications (Japan), 2. National Inst. of Advanced Industrial Science and Technology (Japan))
[Tu-P-79]Experimental and Theoretical Study of P-Channel Mobility Including Temperature and Active Body Bias Effects in 4H-SiC MOSFETs
*Hemant Dixit1, Daniel J. Lichtenwalner1, Sei-Hyung Ryu1 (1. Wolfspeed (USA))
[Tu-P-80]Revealing AC-BTI Mechanisms in SiC MOSFETs through Bias-, Geometry-, and Process-Dependent Characterization
*Jack Chien1, Weijie Wang1, Zijie Zheng1,2, Xiaolin Wang1,2, Leming Jiao1,2, Runze Wang1, Abdul Hannan Yeo1, Qin Gui Roth Voo1, Liyuan Liu1, Xinghua Wang1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. National Univ. of Singapore (Singapore))
[Tu-P-81]High-Frequency Gate Switching Stress-Induced Threshold Voltage Drift in DMOS and UMOS Devices for Accelerated Reliability Assessment
*Koichi Endo1, Asuka Yaguchi1, Masaki Hasegawa1, Junji Senzaki1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
[Tu-P-82]Influence of Gate Oxide Nitridation on Vth Instability under Gate Switching Stress in SiC Trench MOSFETs
*Ryoya Takemura1, Kaito Miyashita1, Katsuhisa Tanaka1, Takuma Suzuki1 (1. Toshiba Electronic Devices & Storage Corp. (Japan))
[Tu-P-83]The Impact of Static and Dynamic Gate Stress on Switching Behavior of 1.2 kV SiC MOSFETs
*Rajrupa Paul1, Hua Shen1 (1. Hitachi Energy Research, Hitachi Energy Ltd. (Switzerland))
[Tu-P-84]Long-term H-Bridge Switching Operation of 1.2 kV SiC MOSFETs Under High VDS Bias, Load Current, and Temperature
*Sara Kuzmanoska1, Nirali Patel1, Jaume Roig1, Sotirios Maslougkas1 (1. onsemi (Germany))
[Tu-P-85]Application-Oriented Half-Bridge Testing Platform for Chip-Level Reliability Assessment in SiC Power Semiconductors
*Lorenzo Rocchino1, Hua Shen1, Francesco Iannuzzo2, Lucas Radon1, Jon Elipe-Fonollosa1, Edoardo Martino1 (1. Hitachi Energy Ltd. (Switzerland), 2. Politecnico di Torino (Italy))