Presentation Information
[Tu-P-75]Wafer-Level Characteristic Variation of 4H-SiC n/p MOSFETs for Mass Production SiC-CMOS Integrated Circuits
*Kota Shimizu1, Kosuke Muraoka1, Tomonori Maeda1,2, Hiroshi Sezaki1,2, Akinori Takeyama3, Takeshi Ohshima3, Kazutoshi Kojima4, Yasunori Tanaka4, Shin-Ichiro Kuroki1 (1. Hiroshima Univ. (Japan), 2. Phenitec Semiconductor Corp. (Japan), 3. QST (Japan), 4. AIST (Japan))