Presentation Information
[Tu-P-76]Memory Characteristics of 4H-SiC Floating-Gate MOS Capacitors
*Ryosuke Namba1, Kosuke Muraoka1, Takeyama Akinori2, Takeshi Ohshima3,2, Kazutoshi Kojima3, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1. Hiroshima Univ. (Japan), 2. QST (Japan), 3. AIST (Japan))