Presentation Information
[Tu-P-78]Distance-Metric-Based Evaluation of Charge-Trap-Induced Degradation in Id–VgsCharacteristics of SiC MOSFETs
*Sanshiro Yoichi1, Koichi Endo2, Hiroki Nagasawa1, Junji Senzaki2, Shinji Yokogawa1 (1. Univ. of Electro-Communications (Japan), 2. National Inst. of Advanced Industrial Science and Technology (Japan))