Presentation Information
[Tu-P-81]High-Frequency Gate Switching Stress-Induced Threshold Voltage Drift in DMOS and UMOS Devices for Accelerated Reliability Assessment
*Koichi Endo1, Asuka Yaguchi1, Masaki Hasegawa1, Junji Senzaki1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))