Presentation Information

[Tu-P-82]Influence of Gate Oxide Nitridation on Vth Instability under Gate Switching Stress in SiC Trench MOSFETs

*Ryoya Takemura1, Kaito Miyashita1, Katsuhisa Tanaka1, Takuma Suzuki1 (1. Toshiba Electronic Devices & Storage Corp. (Japan))