Presentation Information
[Tu-P-88LN]Experimental Demonstration of a Self-Aligned Shielding-Gate 1.2 kV 4H-SiC VDMOSFET with Low Reverse Transfer Capacitance
*Fu-Chen Liang1, Wei-Jhe Liao1, Han-Wei Chen1, Li-Jung Lin2, Chun-Hao Lai2, Shih-Lung Tsai3, Chien-Chih Lu3, Bing-Yue Tsui1 (1. National Yang Ming Chiao Tung University (Taiwan), 2. Mi Semiconductor Co., Ltd. (Taiwan), 3. Mosel Vitelic Inc. (Taiwan))