Presentation Information
[Tu-P-95LN]TCAD Validation of C–V Interface-Trap Extraction in 4H-SiC MOS Capacitors Across Four Gate Oxide Processes
*Michael Mawby1, Philip Mawby1, David Mawby1, Arne Renz2, Miriam John2, Peter Gammon2 (1. KuasaSemi Ltd. (UK), 2. Warwick Univ. (UK))