Presentation Information
[Tu-P-96LN]Interface Trap Density Estimation by Forward Modelling of Quasi-Static
and High Frequency C–V characteristics in 4H-SiC MOS Capacitors
*James Lobry1, Rhys Washer1, Jon Evans1, Owen Guy1, Saptarsi Ghosh1, Tim Mottram2, Mike Jennings1 (1. Swansea University (UK), 2. Siemens (UK))