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[Tu-P-98LN]
Negative Threshold Voltage Shifts in 4H-SiC MOSFETs under Bipolar AC Gate Stress: Influence of Channel Length and Nitridation Time
*Aoi Koyasu
1
, Noriyuki Iwamuro
1
, Hiroshi Yano
1
(1. Univ. of Tsukuba (Japan))
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