Session Details
[Tu-P]Device and Module Reliability, Packaging, and Applications
Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC
Poster-C(4th Floor, G403+G404)
[Tu-P-78]Distance-Metric-Based Evaluation of Charge-Trap-Induced Degradation in Id–VgsCharacteristics of SiC MOSFETs
*Sanshiro Yoichi1, Koichi Endo2, Hiroki Nagasawa1, Junji Senzaki2, Shinji Yokogawa1 (1. Univ. of Electro-Communications (Japan), 2. National Inst. of Advanced Industrial Science and Technology (Japan))
[Tu-P-79]Experimental and Theoretical Study of P-Channel Mobility Including Temperature and Active Body Bias Effects in 4H-SiC MOSFETs
*Hemant Dixit1, Daniel J. Lichtenwalner1, Sei-Hyung Ryu1 (1. Wolfspeed (USA))
[Tu-P-80]Revealing AC-BTI Mechanisms in SiC MOSFETs through Bias-, Geometry-, and Process-Dependent Characterization
*Jack Chien1, Weijie Wang1, Zijie Zheng1,2, Xiaolin Wang1,2, Leming Jiao1,2, Runze Wang1, Abdul Hannan Yeo1, Qin Gui Roth Voo1, Liyuan Liu1, Xinghua Wang1, Umesh Chand1, Xiao Gong1,2, Navab Singh1, Yee Chia Yeo1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. National Univ. of Singapore (Singapore))
[Tu-P-81]High-Frequency Gate Switching Stress-Induced Threshold Voltage Drift in DMOS and UMOS Devices for Accelerated Reliability Assessment
*Koichi Endo1, Asuka Yaguchi1, Masaki Hasegawa1, Junji Senzaki1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
[Tu-P-82]Influence of Gate Oxide Nitridation on Vth Instability under Gate Switching Stress in SiC Trench MOSFETs
*Ryoya Takemura1, Kaito Miyashita1, Katsuhisa Tanaka1, Takuma Suzuki1 (1. Toshiba Electronic Devices & Storage Corp. (Japan))
[Tu-P-83]The Impact of Static and Dynamic Gate Stress on Switching Behavior of 1.2 kV SiC MOSFETs
*Rajrupa Paul1, Hua Shen1 (1. Hitachi Energy Research, Hitachi Energy Ltd. (Switzerland))
[Tu-P-84]Long-term H-Bridge Switching Operation of 1.2 kV SiC MOSFETs Under High VDS Bias, Load Current, and Temperature
*Sara Kuzmanoska1, Nirali Patel1, Jaume Roig1, Sotirios Maslougkas1 (1. onsemi (Germany))
Cancelled
[Tu-P-85]Application-Oriented Half-Bridge Testing Platform for Chip-Level Reliability Assessment in SiC Power Semiconductors
*Lorenzo Rocchino1, Hua Shen1, Francesco Iannuzzo2, Lucas Radon1, Jon Elipe-Fonollosa1, Edoardo Martino1 (1. Hitachi Energy Ltd. (Switzerland), 2. Politecnico di Torino (Italy))
[Tu-P-97LN]Comparative Repetitive Short-Circuit Degradation of Commercial 650V SiC MOSFETs
*Haiyong Wan1, Nikolaos Iosifidis1, Olayiwola Alatise1, Peter Michael Gammon1 (1. Univ. of Warwick (UK))
[Tu-P-98LN]Negative Threshold Voltage Shifts in 4H-SiC MOSFETs under Bipolar AC Gate Stress: Influence of Channel Length and Nitridation Time
*Aoi Koyasu1, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Univ. of Tsukuba (Japan))