Presentation Information

[We-1A-03]Investigating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Differential Kelvin-Source-Current Measurements

*Jonas Müller1, Hauke Lutzen1, Kazune Idei2, Wataru Saito2, Nando Kaminski1 (1. Univ. Bremen (Germany), 2. Univ. Kyushu (Japan))