ICSCRM2026
Advanced Search

Session Details

Oral SessionTrack 09 Device and Module Reliability, Packaging, and Applications

[We-1A]Robustness

Wed. Sep 30, 2026 8:40 AM - 10:00 AM JST
Wed. Sep 30, 2026 11:40 PM - 1:00 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Dominique PLANSON(Institute National des Sciences Appliquées de Lyon, France), Donald Gajewski(Wolfspeed, USA)
8:40 AM - 9:00 AM JST(11:40 PM - 12:00 AM UTC)

[We-1A-01]Influence of Cell Design on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations

*Madhu Lakshman Mysore1, Rahul Vijaybhai Chavda1, Josef Lutz1, Thomas Basler1 (1. Chemnitz University of Technology (Germany))
9:00 AM - 9:20 AM JST(12:00 AM - 12:20 AM UTC)

[We-1A-02]Differentiating the Impact of Device Design, Circuit Layout and
Components on the Stability of Multichip SiC Power MOSFET Modules

*Ivana Kovacevic-Badstuebner1, Alessandro Ilardi1, Michel Nagel1, Anja Brandl1, Ulrike Grossner1 (1. APS-ETH Zurich (Switzerland))
9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[We-1A-03]Investigating Thermal and Degradation Effects in Parallel SiC-MOSFETs Using Differential Kelvin-Source-Current Measurements

*Jonas Müller1, Hauke Lutzen1, Kazune Idei2, Wataru Saito2, Nando Kaminski1 (1. Univ. Bremen (Germany), 2. Univ. Kyushu (Japan))
9:40 AM - 10:00 AM JST(12:40 AM - 1:00 AM UTC)

[We-1A-04]Electro-thermal Stress on 3.5 kV SiC Diodes with Different Transition Layer between Active and Termination Regions

*Philippe Godignon1, Romain Lavieville1, Jérôme Biscarrat1, Cyrille Le Royer1 (1. CEA-Leti (France))
Back to Category List