Presentation Information

[We-1B-04]Optical polarization characterization of silicon vacancies in 4H-SiC

*Tetsuri Nishikawa1,2, Naoya Morioka1,2, Hiroshi Abe3, Takeshi Ohshima3,4, Noriokazu Mizuochi1,2,5 (1. Institute for Chemical Resarch, Kyoto Univ. (Japan), 2. Center for Spintronic Rsearch Network, Kyoto Univ. (Japan), 3. National Institutes of Quantum Science and Technology (QST) (Japan), 4. Depeartment of Materials Science, Tohoku Univ. (Japan), 5. International Center for Quantum-field Measurement Systems for Studies of the Universe and Particles, KEK (Japan))