Session Details

[We-1B]Optimizing Access to Si Vacancies

Wed. Sep 30, 2026 8:40 AM - 10:10 AM JST
Wed. Sep 30, 2026 11:40 PM - 1:10 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Takeshi Ohshima(National Institutes for Quantum Science and Technology, Japan), Rachael L. Myers-Ward(United States Naval Research Laboratory, USA)

[We-1B-01]Spin and Charge Properties and Quantum Functionalities of SiC Color Centers

*Naoya Morioka1,2 (1. Institute for Chemical Research, Kyoto Univ. (Japan), 2. Center for Spintronics Research Network, Institute for Chemical Research, Kyoto Univ. (Japan))

[We-1B-02]Oxide-based Surface Passivation for Silicon Vacancy Colour Centres in Silicon Carbide

*Jonah Heiler1,2, Leonard Kurt Sidney Zimmermann1,2, Nien-Hsuan Lee1,2, Kevin Menguelti1, Stephan Kucera1, Jean-Nicolas Audinot1, Wolfgang Knolle3, Jawad Ul-Hassan4, Florian Kaiser1,2 (1. Luxembourg Inst. of Sci. and Tech. (Luxembourg), 2. Univ. of Luxembourg (Luxembourg), 3. Leibniz Inst. of Surface Engineering (Germany), 4. Linköping Univ. (Sweden))

[We-1B-03]Generation of Single Solid-state Defects within 4H-SiC Solid Immersion Lenses through Femtosecond Laser Writing

Alexander Jones1, Xingrui Cheng2, Shravan Kumar Parthasarathy3, Muhammad Junaid Arshad1, Pasquale Cilibrizzi1, Roland Nagy3, Patrick Salter2, Jason Smith2, Cristian Bonato1, *Christiaan Bekker1 (1. Heriot-Watt Univ. (UK), 2. Univ. of Oxford (UK), 3. Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany))

[We-1B-04]Optical polarization characterization of silicon vacancies in 4H-SiC

*Tetsuri Nishikawa1,2, Naoya Morioka1,2, Hiroshi Abe3, Takeshi Ohshima3,4, Noriokazu Mizuochi1,2,5 (1. Institute for Chemical Resarch, Kyoto Univ. (Japan), 2. Center for Spintronic Rsearch Network, Kyoto Univ. (Japan), 3. National Institutes of Quantum Science and Technology (QST) (Japan), 4. Depeartment of Materials Science, Tohoku Univ. (Japan), 5. International Center for Quantum-field Measurement Systems for Studies of the Universe and Particles, KEK (Japan))