Presentation Information

[We-2A-02]1200V SiC Trench-Gate Superjunction MOSFET: Design Considerations for different Applications

*Andreas Korzenietz1, Caspar Leendertz1, Martin Weidl1, Kristijan Luka Mletschnig2, Paolo Paletti2, Andreas Vörckel2, Matteo Dainese2, Walia Sandeep2, Nico Fontana2, Markus Beninger-Bina1, Frank Hille1 (1. Infineon Technologies AG, Germany (Germany), 2. Infineon Technologies AG, Austria (Austria))