ICSCRM2026
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Session Details

Oral SessionTrack 07 Power Devices

[We-2A]MOSFETs

Wed. Sep 30, 2026 10:30 AM - 12:20 PM JST
Wed. Sep 30, 2026 1:30 AM - 3:20 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:KUNGYEN LEE(National Taiwan University, Taiwan), Hiroki Niwa(Mitsubishi Electric, Japan)
10:30 AM - 11:00 AM JST(1:30 AM - 2:00 AM UTC)

[We-2A-01]Column Design for High Avalanche Withstanding Capability in 1.2kV-class SiC Superjunction MOSFET

*Shinichiro Matsunaga1, Takeshi Tawara1, Kensuke Takenaka2, Shunki Narita2, Shinsuke Harada1 (1. AIST (Japan), 2. Fujielectric. Co, Ltd (Japan))
11:00 AM - 11:20 AM JST(2:00 AM - 2:20 AM UTC)

[We-2A-02]1200V SiC Trench-Gate Superjunction MOSFET: Design Considerations for different Applications

*Andreas Korzenietz1, Caspar Leendertz1, Martin Weidl1, Kristijan Luka Mletschnig2, Paolo Paletti2, Andreas Vörckel2, Matteo Dainese2, Walia Sandeep2, Nico Fontana2, Markus Beninger-Bina1, Frank Hille1 (1. Infineon Technologies AG, Germany (Germany), 2. Infineon Technologies AG, Austria (Austria))
11:20 AM - 11:40 AM JST(2:20 AM - 2:40 AM UTC)

[We-2A-03]Impact of Distributed Gate Resistance on Switching Dynamics in a Segmented 4H-SiC MOSFET Model

*Jae-Hyung Jeremiah Park1, Arman Rashid1, Toby Schaffer1, Jeff Joohyung Kim1, Sei-Hyung Ryu1 (1. Wolfspeed Inc. (USA))
11:40 AM - 12:00 PM JST(2:40 AM - 3:00 AM UTC)

[We-2A-04]Safe Operating Area for Reverse Recovery of SiC MOSFET Body Diodes in Single and Parallel Operation

*Abhishek Maitra1, Marius Lößner1, Christian Bäumler1, Christoph Hornstein2, Toni Zimmermann2, Olga Siwak2, Josef Lutz1, Thomas Basler1 (1. Chemnitz Univ. of Tech. (Germany), 2. Vitesco Technologies GmbH (Germany))
12:00 PM - 12:20 PM JST(3:00 AM - 3:20 AM UTC)

[We-2A-05]Quantitative Extraction of Channel and JFET Resistances in SiC MOSFETs and Their Impact on the Ron–SCWT Trade-off

*So Uchiyama1, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Univ. of Tsukuba (Japan))
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