Session Details
[We-2A]MOSFETs
Wed. Sep 30, 2026 10:30 AM - 12:40 PM JST
Wed. Sep 30, 2026 1:30 AM - 3:40 AM UTC
Wed. Sep 30, 2026 1:30 AM - 3:40 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:KUNGYEN LEE(National Taiwan University, Taiwan), Hiroki Niwa(Mitsubishi Electric, Japan)
[We-2A-01 (Invited)]Column Design for High Avalanche Withstanding Capability in 1.2kV-class SiC Superjunction MOSFET
*Shinichiro Matsunaga1, Takeshi Tawara1, Kensuke Takenaka2, Shunki Narita2, Shinsuke Harada1 (1. AIST (Japan), 2. Fujielectric. Co, Ltd (Japan))
[We-2A-02]1200V SiC Trench-Gate Superjunction MOSFET: Design Considerations for different Applications
*Andreas Korzenietz1, Caspar Leendertz1, Martin Weidl1, Kristijan Luka Mletschnig2, Paolo Paletti2, Andreas Vörckel2, Matteo Dainese2, Walia Sandeep2, Nico Fontana2, Markus Beninger-Bina1, Frank Hille1 (1. Infineon Technologies AG, Germany (Germany), 2. Infineon Technologies AG, Austria (Austria))
[We-2A-03]Impact of Distributed Gate Resistance on Switching Dynamics in a Segmented 4H-SiC MOSFET Model
*Jae-Hyung Jeremiah Park1, Arman Rashid1, Toby Schaffer1, Jeff Joohyung Kim1, Sei-Hyung Ryu1 (1. Wolfspeed Inc. (USA))
[We-2A-04]Safe Operating Area for Reverse Recovery of SiC MOSFET Body Diodes in Single and Parallel Operation
*Abhishek Maitra1, Marius Lößner1, Christian Bäumler1, Christoph Hornstein2, Toni Zimmermann2, Olga Siwak2, Josef Lutz1, Thomas Basler1 (1. Chemnitz Univ. of Tech. (Germany), 2. Vitesco Technologies GmbH (Germany))
[We-2A-05]Quantitative Extraction of Channel and JFET Resistances in SiC MOSFETs and Their Impact on the Ron–SCWT Trade-off
*So Uchiyama1, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Univ. of Tsukuba (Japan))
[We-2A-06LN]Transition of Mobility-Limiting Mechanism from Trench to Fin MOS Channels Observed by Systematic Scaling in 4H-SiC FinFETs
*Tomoka Suematsu1,2,3, Hirohisa Hirai1, Mitsuru Sometani1, Mitsuo Okamoto1, Shinsuke Harada1, Haruka Shimizu2, Naoki Watanabe2, Yuki Mori2, Akio Shima2, Tsunenobu Kimoto3 (1. National Institute of Advanced Industrial Science and Technology (Japan), 2. Hitachi, Ltd. (Japan), 3. Kyoto Univ. (Japan))