[We-2A] MOSFETs

12:20 PM - 12:40 PM JST(3:20 AM - 3:40 AM UTC)Late News

[We-2A-06LN] Transition of Mobility-Limiting Mechanism from Trench to Fin MOS Channels Observed by Systematic Scaling in 4H-SiC FinFETs

*Tomoka Suematsu^1,2,3, Hirohisa Hirai¹, Mitsuru Sometani¹, Mitsuo Okamoto¹, Shinsuke Harada¹, Haruka Shimizu², Naoki Watanabe², Yuki Mori², Akio Shima², Tsunenobu Kimoto³ (1. National Institute of Advanced Industrial Science and Technology (Japan), 2. Hitachi, Ltd. (Japan), 3. Kyoto Univ. (Japan))