[We-2B] Stacking Fault Expansion

10:40 AM - 11:10 AM JST(1:40 AM - 2:10 AM UTC)

[We-2B-01] The Role of Temperature and Carrier Lifetime in Electronically-induced Expansion of Single Shockley Stacking Faults in 4H-SiC

*Koji Maeda¹, Satoshi Asada¹, Koichi Murata¹, Hidekazu Tsuchida¹ (1. CRIEPI (Japan))