Session Details
[We-2B]Stacking Fault Expansion
Wed. Sep 30, 2026 10:40 AM - 12:30 PM JST
Wed. Sep 30, 2026 1:40 AM - 3:30 AM UTC
Wed. Sep 30, 2026 1:40 AM - 3:30 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Ulrike Grossner(ETH Zürich, Switzerland), Tsunenobu Kimoto(Kyoto University, Japan)
[We-2B-01]The Role of Temperature and Carrier Lifetime in Electronically-induced Expansion of Single Shockley Stacking Faults in 4H-SiC
*Koji Maeda1, Satoshi Asada1, Koichi Murata1, Hidekazu Tsuchida1 (1. CRIEPI (Japan))
[We-2B-02]Investigation of Extended Defects and Electrical Performance of 6.5 kV SiC IGBTs Fabricated on P-type SiC Substrate
*Nadeemullah A Mahadik1, Alecsander N Imhof1, James C Gallagher1, Youngsang Kim2, Justin Lynch3, Seung Yup Jang3, Woongje Sung3, Adam Morgan3, Michael Owen2, Douglas Dukes4, Anant A Agarwal3 (1. US Naval Research Laboratory (USA), 2. Defense Microelectronics Activity (USA), 3. NoMIS Power (USA), 4. Pallidus Inc. (USA))
[We-2B-03]Atomic and Electronic View of Stacking Fault Expansion and Its Suppression Recipes in 4H-SiC
*Kenji Shiraishi2,6, Masaki Sano1, Yuansheng Zhao2,3,4, Takashi Yoda5, Takayuki Oba5, Jun Kojima2, Shoichi Onda2, Atsushi Oshiyama2,6 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institute of Materials and Systems for Sustainability, Nagoya University (Japan), 3. Quemix Inc. (Japan), 4. Department of Physics, The University of Tokyo (Japan), 5. WOW Alliance, Institute of Science Tokyo (Japan), 6. Center for Innovative Integrated Electronic Systems, Tohoku University (Japan))
[We-2B-04]Characterization of Triangular Defect Stacking Faults in 180 um Thick SiC Epitaxial Layers
*Alecsander Imhof1, Nadeemullah Mahadik2, Shanthi Subramanian3, Srujana Prayakarao3, Dong Lee3 (1. NRC Post Doc at U.S. Naval Res. Lab. (USA), 2. U.S. Naval Res. Lab. (USA), 3. Coherent Corp. (USA))