Presentation Information

11:10 AM - 11:30 AM JST(2:10 AM - 2:30 AM UTC)

[We-2B-02]Investigation of Extended Defects and Electrical Performance of 6.5 kV SiC IGBTs Fabricated on P-type SiC Substrate

*Nadeemullah A Mahadik¹, Alecsander N Imhof¹, James C Gallagher¹, Youngsang Kim², Justin Lynch³, Seung Yup Jang³, Woongje Sung³, Adam Morgan³, Michael Owen², Douglas Dukes⁴, Anant A Agarwal³ (1. US Naval Research Laboratory (USA), 2. Defense Microelectronics Activity (USA), 3. NoMIS Power (USA), 4. Pallidus Inc. (USA))

Back to Session information