[We-3A] High Voltage Devices

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[We-3A-03] A Novel 6.5kV 4H-SiC Split-Gate One-Channel JBSFET with Superior Third-Quadrant and Dynamic Performance

*Mohamed Torky¹, Justin M Lynch¹, Stephen A Mancini¹, Adam J Morgan², Woongje Sung¹ (1. University at Albany, State University of New York (USA), 2. NoMIS Power Corporation (USA))