[We-3A] High Voltage Devices | ICSCRM2026

Session Details

Oral SessionTrack 07 Power Devices

[We-3A]High Voltage Devices

Wed. Sep 30, 2026 2:00 PM - 3:50 PM JST
Wed. Sep 30, 2026 5:00 AM - 6:50 AM UTC

Oral-A(1st Floor, G7+G8)

Chair:Yoshiyuki Yonezawa(National Institute of Advanced Industrial Science and Technology, Japan), Andrea Irace(University of Naples Federico II, Italy)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[We-3A-01]High Voltage MOS Devices in 4H-SiC: From Lab to Reality

*Sei-Hyung Ryu¹ (1. Wolfspeed, Inc. (USA))

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[We-3A-02]Optimization of JFET Implantation Profiles for 12-kV 4H-SiC JBSFETs and JBS Diodes Using Shallow and Deep Designs

*Soo Young Moon¹, Stephen A. Mancini¹, Justin Lynch¹, Miguel Hinojosa², Aivars Lelis², Woongje Sung¹ (1. Univ. at Albany, State Univ. of New York (USA), 2. U.S. Army Research Laboratory (ARL) (USA))

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[We-3A-03]A Novel 6.5kV 4H-SiC Split-Gate One-Channel JBSFET with Superior Third-Quadrant and Dynamic Performance

*Mohamed Torky¹, Justin M Lynch¹, Stephen A Mancini¹, Adam J Morgan², Woongje Sung¹ (1. University at Albany, State University of New York (USA), 2. NoMIS Power Corporation (USA))

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[We-3A-04]Short-Circuit Robustness in SiC MOSFETs: Discrepancy Between Stepwise and Single-Shot Measurements

*Madhu Lakshman Mysore¹, Rahu Vijaybhai Chavda¹, Josef Lutz¹, Thomas Basler¹ (1. Chemnitz University of Technology (Germany))

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[We-3A-05]Design and Experimental Demonstration of 20 kV Rated SiC MOSFETs

*Yun Xia¹, ChangWei Zheng¹, Wei Liu¹, Yitian Jiang¹, Zheng Ye¹, Ying Dai¹, Jinliang He², Zhongqing Peng², Zhijie Xue², Jinwang Bai², Kaiju Liao², Shangqian Tan², Rudai Quan¹, Hongyao Zhu¹, Qin Hu¹, Gang Chen¹, Menglong Zhang¹, Yuxi Wan¹ (1. Shenzhen Pinghu Lab. (China), 2. Shenzhen Pengjin High-Tech Co., Ltd. (China))

Back to Category List