[We-3A] High Voltage Devices

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[We-3A-05] Design and Experimental Demonstration of 20 kV Rated SiC MOSFETs

*Yun Xia¹, ChangWei Zheng¹, Wei Liu¹, Yitian Jiang¹, Zheng Ye¹, Ying Dai¹, Jinliang He², Zhongqing Peng², Zhijie Xue², Jinwang Bai², Kaiju Liao², Shangqian Tan², Rudai Quan¹, Hongyao Zhu¹, Qin Hu¹, Gang Chen¹, Menglong Zhang¹, Yuxi Wan¹ (1. Shenzhen Pinghu Lab. (China), 2. Shenzhen Pengjin High-Tech Co., Ltd. (China))