[We-3B] SiC and Related Material Epitaxy

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)Late News

[We-3B-03LN] Enhanced Carrier Lifetime in Thick 4H-SiC Epitaxial Layers Grown by Close-Spaced Sublimation on A p-Type Substrate

*Sota Uoya¹, Heiji Kitano², Shuto Sugimoto³, Tsutomu Sonoda³, Daisuke Nakamura⁴, Toru Ujihara^2,3, Masashi Kato¹ (1. Nagoya Inst. of Tech. (Japan), 2. Nagoya Univ. (Japan), 3. Inst. of Materials and Systems for Sustainability (Japan), 4. TOYOTA CENTRAL R&D LABS., INC. (Japan))