[We-3B] SiC and Related Material Epitaxy | ICSCRM2026

Session Details

Oral SessionTrack 02 Epitaxial and Thin-Film Growth

[We-3B]SiC and Related Material Epitaxy

Wed. Sep 30, 2026 2:00 PM - 3:50 PM JST
Wed. Sep 30, 2026 5:00 AM - 6:50 AM UTC

Oral-B(3rd Floor, G303+G304)

Chair:Rachael L. Myers-Ward(United States Naval Research Laboratory, USA), Jawad Ul Hassan(Linköping University, Sweden)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[We-3B-01]Thick Epitaxy on 200mm Silicon Carbide for Ultra-High Voltage Devices

*Thomas A. Kuhr¹, Lianghong (Ryan) Liu¹, Derrick Kamber¹, Denis Tsvetkov¹, Scott Ustin¹ (1. Wolfspeed, USA (USA))

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[We-3B-02]Investigation of Nitrogen Incorporation under High HCl/SiH₄ Ratios during CVD Trench Filling Growth

*Shiyang Ji¹, Kazutoshi Kojima¹, Mitsuru Sometani¹, Shinsuke Harada¹, Yasunori Tanaka¹ (1. AIST (Japan))

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[We-3B-03]Enabling Next Generation High Voltage Power Applications Through Thick 4HSiC Epitaxy

*Tawhid Rana¹, Dong Lee¹, Taye Tarekegn¹, Srujana Prayakarao¹, Nadeemullah Mahadik², Alecsander Imhof², Shanthi Subramanian¹ (1. Coherent Corp. (USA), 2. US Naval Res. Lab. (USA))

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[We-3B-04]Void-Free 3C-SiC by Single 2-Temperature Heteroepitaxy Process

*Gerard Colston¹, Vishal A Shah¹ (1. Univ. of Warwick (UK))

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[We-3B-05]Low-Temperature Epitaxial Growth of Boron Carbide ( B_xC) on Si-Face 4H-SiC by Direct Growth Process

*Darole Alida MEKOAGNE SOUOP¹, Laurent AUVRAY¹, François CAUWET¹, Stephane COINDEAU², Jean-Marie BLUET³, Gabriel FERRO¹ (1. Univ. of Lyon 1, CNRS, lab. LMI, UMR 5615 (France), 2. Univ. of Grenoble Alpes, CNRS, Grenoble INP, lab. SIMAP (France), 3. Univ. of Lyon 1, CPE Lyon, Ecole Centrale Lyon, INSA Lyon, CNRS, lab. INL, UMR 5270 (France))

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Session Details