ICSCRM2026
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Session Details

Oral SessionTrack 02 Epitaxial and Thin-Film Growth

[We-3B]SiC and Related Material Epitaxy

Wed. Sep 30, 2026 2:00 PM - 3:50 PM JST
Wed. Sep 30, 2026 5:00 AM - 6:50 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Rachael L. Myers-Ward(United States Naval Research Laboratory, USA), Jawad Ul Hassan(Linköping University, Sweden)
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[We-3B-01 (Invited)]Thick Epitaxy on 200mm Silicon Carbide for Ultra-High Voltage Devices

*Thomas A. Kuhr1, Lianghong (Ryan) Liu1, Derrick Kamber1, Denis Tsvetkov1, Scott Ustin1 (1. Wolfspeed, USA (USA))
2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[We-3B-02]Investigation of Nitrogen Incorporation under High HCl/SiH4 Ratios during CVD Trench Filling Growth

*Shiyang Ji1, Kazutoshi Kojima1, Mitsuru Sometani1, Shinsuke Harada1, Yasunori Tanaka1 (1. AIST (Japan))
2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)Late News

[We-3B-03LN]Enhanced Carrier Lifetime in Thick 4H-SiC Epitaxial Layers Grown by Close-Spaced Sublimation on A p-Type Substrate

*Sota Uoya1, Heiji Kitano2, Shuto Sugimoto3, Tsutomu Sonoda3, Daisuke Nakamura4, Toru Ujihara2,3, Masashi Kato1 (1. Nagoya Inst. of Tech. (Japan), 2. Nagoya Univ. (Japan), 3. Inst. of Materials and Systems for Sustainability (Japan), 4. TOYOTA CENTRAL R&D LABS., INC. (Japan))
3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[We-3B-04]Void-Free 3C-SiC by Single 2-Temperature Heteroepitaxy Process

*Gerard Colston1, Vishal A Shah1 (1. Univ. of Warwick (UK))
3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[We-3B-05]Low-Temperature Epitaxial Growth of Boron Carbide ( BxC) on Si-Face 4H-SiC by Direct Growth Process

*Darole Alida MEKOAGNE SOUOP1, Laurent AUVRAY1, François CAUWET1, Stephane COINDEAU2, Jean-Marie BLUET3, Gabriel FERRO1 (1. Univ. of Lyon 1, CNRS, lab. LMI, UMR 5615 (France), 2. Univ. of Grenoble Alpes, CNRS, Grenoble INP, lab. SIMAP (France), 3. Univ. of Lyon 1, CPE Lyon, Ecole Centrale Lyon, INSA Lyon, CNRS, lab. INL, UMR 5270 (France))
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