Presentation Information

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[We-3B-05]Low-Temperature Epitaxial Growth of Boron Carbide ( B_xC) on Si-Face 4H-SiC by Direct Growth Process

*Darole Alida MEKOAGNE SOUOP¹, Laurent AUVRAY¹, François CAUWET¹, Stephane COINDEAU², Jean-Marie BLUET³, Gabriel FERRO¹ (1. Univ. of Lyon 1, CNRS, lab. LMI, UMR 5615 (France), 2. Univ. of Grenoble Alpes, CNRS, Grenoble INP, lab. SIMAP (France), 3. Univ. of Lyon 1, CPE Lyon, Ecole Centrale Lyon, INSA Lyon, CNRS, lab. INL, UMR 5270 (France))

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Presentation Information

[We-3B-05]Low-Temperature Epitaxial Growth of Boron Carbide ( BxC) on Si-Face 4H-SiC by Direct Growth Process

[We-3B-05]Low-Temperature Epitaxial Growth of Boron Carbide ( B_xC) on Si-Face 4H-SiC by Direct Growth Process