Presentation Information
[We-P-02]Suppression of Forward Bias Degradation in 3.3kV DMOSFET Fabricated on 4H-SiC Bonded Substrates
*Seiji Ishikawa1, Yuta Higashi2, Motoki Kobayashi3, Mitsuo Okamoto1, Kazutoshi Kojima1, Shinsuke Harada1 (1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Tech. (Japan), 2. PHENITEC SEMICONDUCTOR Corp. (Japan), 3. Sumitomo Metal Mining Co., Ltd. (Japan))