Presentation Information
[We-P-03]Experimental Demonstration of Improved On-State Performance in 3.3 kV 3D Quasi-Planar Trench SiC MOSFET
*Mansha Kansal1, Munaf Rahimo2, Kyrylo Melnyk3, Giuseppe Capasso1, Alessandro Borghese1, Michele Riccio1, Arne Benjamin Renz3, Giovanni Breglio1, Neophytos Lophitis4, Andrea Irace1, Marina Antoniou3, Iulian Nistor2, Luca Maresca1 (1. University of Naples Federico II (Italy), 2. mQsemi AG (Switzerland), 3. University of Warwick, Warwick, UK (UK), 4. Cyprus University of Technology (Cyprus))
