[We-P] Poster Session

[We-P-08] Design Considerations for 3.3 kV and 6.5 kV 4H-SiC MOSFETs

*Justin Lynch¹, Seung Yup Jang¹, Adam J. Morgan¹, Woongje Sung¹, Youngsang Kim², Michael Owen², Nadeemullah A. Mahadik³, Alecsander N. Imhof³, Rachel L. Myers-Ward³ (1. NoMIS Power Corporation (USA), 2. Defense Microelectronics Activity (USA), 3. U.S. Naval Research Laboratory (USA))