Presentation Information
[We-P-09]Robust 4H-SiC 6.5 kV Edge Termination Based on Floating Field Rings and JTE Termination Design and Optimization
*Zhaoxue Yuan1, Arne Renz1, Nikolaos Iosifidis1, Xinghua Wang2, Xiao Gong2,3, Umesh Chand2, Abhishek Mishra2, Xiaolin Wang2,3, Marina Antoniou1, Peter Gammon1 (1. Univ. of Warwick (UK), 2. Institute of Microelectronics, Agency for Science, Technology, and Research (A*STAR) (Singapore), 3. National University of Singapore (Singapore))
